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2SC3076

Part Number	2SC3076
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3076 DESCRIPTION ·Collector-Emitter Saturation Voltage- : V...
Datasheet	2SC3076 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3076 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
5V (Max.
)@ IC= 1A ·Complementary to 2SA1241 ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier application ·Power switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A IB Base Current PC Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature 1 A 1.
0 W ...

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