TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SA1244
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
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