2SC3072

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg 50 V 40 V 20 8 V 5 A 8 0.5 A 1.0 W 10 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. ...