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2SC3060
NPN Transistor
Description
isc Silicon NPN Power Transistor 2SC3060 DESCRIPTION ·High Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 850V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic generators ·Class C and D
amplifiers
·Defl...
INCHANGE
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SILICON POWER TRANSISTOR
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