DatasheetsPDF.com

2SC3058A

INCHANGE
Part Number 2SC3058A
Manufacturer INCHANGE
Description NPN Transistor
Published Oct 19, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 450V(Min) ·Collector-Em...
Datasheet PDF File 2SC3058A PDF File

2SC3058A
2SC3058A

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 450V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat) ≤ 1 V@ IC = 4A ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For switching regulator and DC/DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 50 A IB Base Current-Continuous PC Collector Power Dissipation @ T...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)