2SC3000

Ordering number:EN866C Features · FBET series. · High fT and small Cre. NPN Epitaxial Planar Silicon Transistor 2SC3000 HF Amplifier Applications Package Dimensions unit:mm 2003A [2SC3000] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Base-to-Collector Time Constant Noise Figure Power Gain ICBO IEBO hFE fT Cre rbb'CC NF PG VCB=10V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=6V, f=1MHz VCE=6V, IC=1mA, f=31.9MHz VCE=6V, IC=1mA, f=100MHz VCE=6V, IC=1mA, f=100MHz * : The 2SC2300 are classified by 1mA hFE as follows : 60 D 120 100 E 200 160 F 320 B : Base C : Collector E : Emitter SANYO : NP Ratings 30 20 5 30 250 125 –55 to +125 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 200 320 0.7 1.1 15 3.0 25 max 0.1 0.1 320* 1.4 22 Unit µA µA MHz pF ps dB dB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably e...