SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC2928
DESCRIPTION ·...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC2928
DESCRIPTION ·With TO-3 package ·High breakdown
voltage APPLICATIONS ·For high
voltage,high speed and high power switching applications PINNING(see Fig.2)
PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 7 5 7 2.5 80 150 -45~150 UNIT V V V A A A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector-emitter saturation
voltage Base-emitter saturation
voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ; RBE=9 IE=10mA ; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=1200V ;IE=0 VCE=650V ; RBE=9 IC=0.5A ; VCE=5V IC=3A ; VCE=5V 15 7 MIN 800 7
2SC2928
SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO ICEO hFE-1 hFE-2
TYP.
MAX
UNIT V V
1.0 1.5 100 100
V V µA µA
Switching times ton ts tf Turn-on time Storage time Fall time IC=3.0A; VCC=250V IB1=0.6A ,IB2=-1.5A...