isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 500V(Min) ·High Switching Speed ·Low ...
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown
Voltage-
: V(BR)CBO= 500V(Min) ·High Switching Speed ·Low Collector Saturation
Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
500
V
VCEO
Collector-Emitter
Voltage
400
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
15
A
70
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2841
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
IC= 3A, IB1= -IB2= 0.6A
tf
Fall Time
2SC2841
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
8
11
MHz
1.0 μ...