2SC2793

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2793 DESCRIPTION · ·With MT-200 package ·High power dissipation ·High current capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High speed and high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2793 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A ICBO Collector cut-off current VCB=900V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE-1 DC current gain IC=10mA ; VCE=5V hFE-2 DC current gain IC=3A ; VCE=5V MIN TYP. MAX UNIT 800 V 7 V 1.0 V 1.5 V 100 μA 100 μA 10 10 NOTICE： I...