2SC2734

isc Silicon NPN Transistor INCHANGE Semiconductor 2SC2734 DESCRIPTION ·Silicon NPN epitaxial type ·Local oscillator wide band amplifier ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF frequency converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor INCHANGE Semiconductor 2SC2734 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 5mA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.7 V 0.5 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 20 200 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 1.4 3.5 GHz COB Output Capacitance CG Conversion Gain NF Noise Figure IE= 0 ; VCB= 10V;f= 1.0MHz VCC=6V,IC=2mA;f=900MHz; fosc=930MHz;fout=30MHz VCC=6V,IC=2mA;f=900MHz; fosc=930MHz;fout=30MHz 1.5 pF 15 dB 9 dB NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained h...