2SC2712

isc Silicon NPN Power Transistor DESCRIPTION ·With SOT-23 packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.15 A 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2712 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 BVCEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 BVEBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.1A; IB= 0.01A VBE(sat) Base-Emitter Saturation Voltage IC= 0.1A; IB= 0.01A ICBO Collector Cutoff Current VCB= 60V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 2mA ; VCE= 6V 2SC2712 MIN TYP. MAX UNIT 60 V 50 V 5 V 0.25 V 0.25 V 0.1 μA 0.1 μA 70 700 Classification of hFE Rank Range O 70-140 Y 120-240 GR 200-400 BL 350-700 NOTICE： ISC reserves the rights to make changes of the con...