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2SC2707 Datasheet

Part Number 2SC2707
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Power Transistor
Datasheet 2SC2707 Datasheet2SC2707 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·High Power Dissipation ·Complement to Type 2SA1147 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltag.

  2SC2707   2SC2707






Part Number 2SC2706
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC2707 Datasheet2SC2706 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Complement to Type 2SA1146 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency low power amplifier applications ·Recommend for 70W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VE.

  2SC2707   2SC2707







Part Number 2SC2706
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC2707 Datasheet2SC2706 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2706 DESCRIPTION ·With TO-3P(I) package ·High power dissipation APPLICATIONS ·For audio power amplifier and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Em.

  2SC2707   2SC2707







Part Number 2SC2705
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC2707 Datasheet2SC2705 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter sustaining Voltage : VCEO=150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA IB Base Current- .

  2SC2707   2SC2707







Part Number 2SC2705
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon NPN transistor
Datasheet 2SC2707 Datasheet2SC2705 Datasheet (PDF)

2SC2705 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,, 2SA1145 。 High transition frequency, small collector output capacitance complementary pair with 2SA1145. / Applications 。 Audio frequency amplifier applications. / Equivalent Circuit / Pinning 123 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 80~160 Y 120~240 http://www.fsbrec.com.

  2SC2707   2SC2707







Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·High Power Dissipation ·Complement to Type 2SA1147 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SC2707 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A ICBO Collector Cutoff Current VCB= 180V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 5A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 12V 2SC2707 MIN TYP. MAX UNIT 180 V 180 V 5 V 3.0 V 100 μA 100 μA 55 160 30 10 MHz Notice: ISC res.


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