DatasheetsPDF.com

2SC2658 Datasheet

Part Number 2SC2658
Manufacturers INCHANGE
Logo INCHANGE
Description Silicon NPN Power Transistor
Datasheet 2SC2658 Datasheet2SC2658 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A .

  2SC2658   2SC2658






Part Number 2SC2659
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC2658 Datasheet2SC2659 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A.

  2SC2658   2SC2658







Part Number 2SC2657
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC2658 Datasheet2SC2657 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 .

  2SC2658   2SC2658







Part Number 2SC2656
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC2658 Datasheet2SC2656 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Col.

  2SC2658   2SC2658







Part Number 2SC2655L
Manufacturers SeCoS
Logo SeCoS
Description NPN Transistor
Datasheet 2SC2658 Datasheet2SC2655L Datasheet (PDF)

Elektronische Bauelemente 2SC2655L 2A , 50V P Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low saturation voltage:VCE(sat)=0.5V(Max)(IC=1A) High speed switching time:tstg=1µs(Typ.) CLASSIFICATION OF hFE (1) Product-Rank 2SC2655L-O Range 70-140 2SC2655L-Y 120-240 TO-92L GH 1 Emitter 2 Collector 3 Base J AD B K E CF Collector 2 3 Base 1 ABSOLUTE MAXIMUM RATINGS (TA =25°C unless otherwise specified) Emitter Parameter Sy.

  2SC2658   2SC2658







Silicon NPN Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2658 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V;IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V hFE-2 fT DC Current Gain IC= 3A ; VCE= 5V Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 2SC2658 MIN TYP. MAX UNIT 500 V 1.0 V 1.5 V 0.1 mA 0.1 mA 15 8 3 MHz Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The info.


2018-04-21 : TT1949    TT1948    TT1947    TT1945    TT1946    KLFM130-MS    KLFM140-MS    KLFM120-MS    KLFM120-MH1    KLFM130-MH1   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)