2SC2647

Transistors 2SC2647 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm ■ Features Optimum for RF amplification, oscillation, mixing, and IF of (0.4) 6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0) (1.0) 4.5±0.1 3.5±0.1 FM/AM radios R 0.9 M type package allowing easy automatic and manual insertion R 0.7 as well as stand-alone fixing to the printed circuit board 4.1±0.2 / ■ Absolute Maximum Ratings Ta = 25°C 1.0±0.1 2.4±0.2 (0.85) 0.45±0.05 2.0±0.2 0.55±0.1 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 1.25±0.05 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 V a e cle con Collector current IC 30 mA lifecy , dis Collector power dissipation PC 400 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 3 2 1 (2.5) (2.5) 1: Base 2: Collector 3: Emitter M-A1 Package in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V tinue anc Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 20 V M is con inten Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V /Dis ma Forward current transfer ratio * hFE VCE = 10 V, IC = 1 mA 70 250  D ance type, Transition frequen...