2SC2644

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2644 2SC2644 VHF~UHF Band Wideband Amplifier Applications Unit: mm · High gain · Low IMD · fT = 4 GHz (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 25 12 3.0 120 40 0.5 125 -55~125 Unit V V V mA mA W °C °C Microwave Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1E Weight: 0.21 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 10 V, IC = 30 mA VCE = 10 V, IC = 30 mA, f = 0.5 GHz VCE = 10 V, IC = 30 mA, f = 1 GHz VCE = 10 V, IC = 10 mA, f = 0.5 GHz VCE = 10 V, IC = 10 mA, f = 1 GHz Min Typ. Max Unit ¾ 4.0 ¾ GHz ¾ 14.0 ¾ ¾ 8.5 ¾ dB ¾ 2.3 ¾ dB ¾ 3.0 ¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 ¾ ¾ 1 mA IEBO VEB = 1.0 V, IC = 0 ¾ ¾ 10 mA hFE VCE = 5 V, IC = 50 mA 20 50 ¾ Cob ¾ 1.6 ¾ pF VCB = 10 V, IE = 0, f = 1 MHz (Note) Cre ¾ 1.1 ¾ pF Note: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-19 2SC2644 2 2003-03-19 Common Emitte...