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2SC2625
Silicon NPN Power Transistors
Description
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power
amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR...
Inchange Semiconductor
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