2SC2616

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2616 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A hFE-1 DC Current Gain IC= 5A; VCE= 5V hFE-2 DC Current Gain IC= 10A; VCE= 5V ICBO Collector Cutoff Current VCB= 400V; IE= 0 ICEO Collector Cutoff Current VCE= 350V; RBE= ∞ IEBO Emitter Cutoff Current VEB= 5V; IC= 0 Switching Times tr Rise Time tstg Storage Time tf Fall Time IC= 10A; IB1= -IB2= 2A, VCC≈ 150V 2SC2616 MIN TYP. MAX UNIT 400 V 1.2 V 1.7 V 1...