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2SC2497 Datasheet

Part Number 2SC2497
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN Transistor
Datasheet 2SC2497 Datasheet2SC2497 Datasheet (PDF)

Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096, 2SC1096A φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCB.

  2SC2497   2SC2497






Part Number 2SC2497
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC2497 Datasheet2SC2497 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A DESCRIPTION ·With TO-126 package ·Complement to type 2SA1096/A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SC2497 VCEO Collector- emitter voltage 2SC2497A VEBO IC ICM Emitter-b.

  2SC2497   2SC2497







NPN Transistor

Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096, 2SC1096A φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 70 V c type) Collector-emitter voltage 2SC2497 VCEO 50 V n d ge. ed (Base open) 2SC2497A 60 le sta ntinu Emitter-base voltage (Collector open) VEBO 5 V a e cyc isco Collector current IC 1.5 A life d, d Peak collector current ICP 3 A n u duct type Collector power dissipation PC 1.2 W te tin Pro ued Junction temperature Tj 150 °C four ntin Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 4.6±0.2 2.3±0.2 0.5±0.1 1.76±0.1 123 1: Emitter 2: Collector 3: Base TO-126B-A1 Package in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions inc typ Collector-base voltage (Emitter open) c tinued ance Collector-emitter voltage 2SC2497 M is con inten (Base open) 2SC2497A VCBO VCEO IC = 1 mA, IE = 0 IC = 2 mA, IB = 0 /Dis ma Collector-base cutoff current (Emitter open) D ance type, Collector-emitter cutoff current (Base open) ten ce Emitter-base cutoff current (Collector open) ain nan Forw.


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