2SC2412KSLT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 1 BASE 3 COLLECTOR 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Collector power dissipation PC Junction temperature Tj Storage temperature T stg 50 V 60 V 7.0 V 150 mAdc 0.2 W 150 °C -55 ~+150 °C DEVICE MARKING 2SC2412K*LT1 =G1F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Collector–Emitter Breakdown Voltage (IC = 1 mA) Emitter–Base Breakdown Voltage (IE = 50 µA) Collector–Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1mA) Transition frequency (V CE = 12 V, I E= – 2mA, f =30MHz ) Output capacitance (V CB = 12 V, I E= 0A, f =1MHz ) Symbol V (BR)CEO V ...