Transistors
2SC2377
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
■ Features • Optimum ...
Transistors
2SC2377
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
■ Features Optimum for RF amplification of FM/AM radios
(0.4)
6.9±0.1 (1.5)
(1.5)
2.5±0.1 (1.0)
(1.0)
3.5±0.1
4.5±0.1
High transition frequency fT
R 0.9
M type package allowing easy automatic and manual insertion
R 0.7
as well as stand-alone fixing to the printed circuit board
4.1±0.2
/ ■ Absolute Maximum Ratings Ta = 25°C
1.0±0.1
2.4±0.2
(0.85) 0.55±0.1
0.45±0.05
2.0±0.2
e Parameter
Symbol Rating
Unit
c type) Collector-base
voltage (Emitter open) VCBO
30
1.25±0.05
V
n d ge. ed Collector-emitter
voltage (Base open) VCEO
20
V
sta tinu Emitter-base
voltage (Collector open) VEBO
3
V
a e cycle iscon Collector current
IC
15
mA
life d, d Collector power dissipation
PC
200
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg −55 to +150 °C
3
2
1
(2.5) (2.5)
1: Base 2: Collector 3: Emitter M-A1 Package
in n s followlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Base-emitter
voltage
VBE VCB = 6 V, IE = −1 mA
720
mV
tinue anc Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
100 nA
M is con inten Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0
10
µA
/Dis ma Emitter-base cutoff current (Collector open) IEBO VEB = 3 V, IC = 0
1
µA
D ance type, Forward c...
