2SC2351

DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES NF MAG 1.5 dB 14 dB TYP. TYP. @ f = 1.0 GHz @ f = 1.0 GHz PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 0.4 −0.05 +0.1 1.5 0.65 −0.15 +0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 0.95 0.95 Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCEO VEBO IC PT Tj Tstg 12 3.0 70 250 150 −65 to +150 V V mA mW °C 2.9±0.2 Collector to Base Voltage VCBO 25 V 2 0.3 °C 1.1 to 1.4 Marking 0.16 −0.06 +0.1 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Insertion Power Gain Noise Figure Maximum Available Gain SYMBOL ICBO IEBO hFE fT Cob S21e NF MAG 2 MIN. TYP. MAX. 0.1 0.1 UNIT TEST CONDITIONS VCB = 15 V, IE = 0 VEB = 2.0 V, IC = 0 VCE = 10 V, IC = 20 mA µA µA 40 4.5 0.75 9 11 1.5 14 200 GHz 1.0 pF dB 3.0 dB dB VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 5 mA, f = 1.0 GHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz hFE Classification Class Marking hFE E/P * R2 40 to 120 F/Q * R3 100 to 200 * Old Specification / New Specification Document No. P10350EJ3V1DS00 (3rd edition) Date Published March 1997 N Printed in Japan 0 to 0.1 © 0.4 −0.05 +0...