2SC2333

isc Silicon NPN Power Transistor 2SC2333 DESCRIPTION ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 400V(Min) ·High Speed Switching ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and ultrasonic appliance applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2333 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A 1.2 V ICBO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCB= 400V ; IE= 0 VCE= 400V;VBE(off)=-5V VCE= 400V;VBE(off)=-5V;Ta= 125℃ VEB= 5V; IC= 0 10 μA 10 μA 1.0 mA 10 μA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 20 ...