2SC2324(K)
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
2
3 1. Emitter 2. Coll...
2SC2324(K)
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
2
3 1. Emitter 2. Collector 3. Base
1
2
3
1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
Ratings 60 60 7 1 2 0.8 8 150 –55 to +150
Unit V V V A A W W °C °C
2SC2324(K)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 60 7 — 2000 — — — — Typ — — — — — — 100 600 Max — — 10 — 1.5 2.0 — — V V ns ns VCC = 12 V I C = 250 mA, IB1 = –IB2 = 5 mA Unit V V µA Test conditions I C = 1 mA, RBE = ∞ I E = 0.1 mA, IC = 0 VCB = 60 V, IE = 0 VCE = 10 V, IC = 500 mA*1 I C = 500 mA, IB = 0.5 mA*1 Collector to emitter breakdown V(BR)CEO
voltage Emitter to base breakdown
voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Turn on time Turn off time Note: 1. Pulse test. V(BR)EBO I CBO hFE VCE(sat) VBE(sat) t on t off
Maximum Collector Dissipation Curve 10 Collector power dissipation Pc (W) 3 i C (peak)
10
Area of Safe Operation
1µ s
Collector Current IC (A)
8
1.0
IC (max)
0µ s
PW
6
0.3
Ta = 25°C 1 Shot Pulse DC (TC = 25°C)
1m s
=1
DC
0m s
4
Op era
2
0.1
tio n
0.03 0 50 100 150 Case Temperature TC (°C) 200 1 2 5 10 20 50 100 Col...