2SC2309
Silicon NPN Epitaxial
Application
Low frequency amplifier
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3...
2SC2309
Silicon NPN Epitaxial
Application
Low frequency amplifier
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SC2309
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 200 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown
voltage Symbol V(BR)CBO Min 55 50 5 — —
1
Typ — — — — — — — — 230 1.8
Max — — — 0.5 0.5 1200 0.75 0.2 — 3.5
Unit V V V µA µA
Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA
Collector to emitter breakdown V(BR)CEO
voltage Emitter to base breakdown
voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter
voltage Collector to emitter saturation
voltage Gain bandwidth product Collector output capacitance Note: D 250 to 500 E 400 to 800 F 600 to 1200 V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) fT Cob
250 — — — —
V V MHz pF
VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz
1. The 2SC2309 is grouped by h FE as follows.
See characteristic curves of 2SC1345.
2
2SC2309
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 250 200 150 100 50
0
50 100 Ambient Temperature Ta (°C)
150
...