2SC2298

2SC2298 Silicon NPN Epitaxial Application High gain amplifier Outline TO-126 MOD 1 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VCBO VCEO VEBO IC IC(peak) PC PC* Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation w w .D w 3 t a S a e h t e 3 U 4 .c 2 m o 1. Emitter 2. Collector 3. Base 1 Ratings 30 30 10 1.0 1.5 0.8 8 150 –55 to +150 Unit V V V A A W W °C °C w w w .D a S a t e e h U 4 t m o .c 2SC2298 Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 — 1 Typ — — — — — — — Max — 10 — — — 1.5 2.0 Unit V µA Test conditions IC = 1 mA, RBE = ∞ VEB = 10 V, IC = 0 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 100 mA VCE = 3 V, IC = 400 mA (pulse test) Collector to emitter breakdown V(BR)CEO voltage Emitter cutoff current DC current transfer ratio IEBO hFE1* hFE2* hFE3* Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1 4000 10000 10000 — — 1 VCE(sat) VBE(sat) V V IC = 400 mA, IB = 0.1 mA (pulse test) 1. The 2SC2298 is grouped by hFE as follows. B C more 5000 hFE1 hFE2 hFE3 more 4000 more 10000 more 30000 more 10000 more 25000 Maximum Collector Dissipation Curve 10 Collector power dissipation PC (W) 3 8 iC(peak) 10 Area of Safe Operation 1µ s Collector current IC (A) 1.0 IC(max) 0µ s 1m s PW 6 0.3 4 Ta = 25°C 1 Shot P...