2SC2295

Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 0.40+–00..0150 Unit: mm 0.16+–00..0160 3 1.50–+00..0255 2.8–+00..32 ■ Features 0.4±0.2 Optimum for RF amplification of FM/AM radios 5˚ High transition frequency fT Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 1.9±0.1 2.90+–00..0250 (0.65) / ■ Absolute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit c e. d ty Collector-base voltage (Emitter open) VCBO 30 V n d stag tinue Collector-emitter voltage (Base open) VCEO 20 0 to 0.1 1.1–+00..12 1.1–+00..13 V a e cle con Emitter-base voltage (Collector open) VEBO 5 V lifecy , dis Collector current IC 30 mA n u duct typed Collector power dissipation PC 200 mW te tin Pro ed Junction temperature Tj 150 °C four ntinu Storage temperature Tstg −55 to +150 °C 10˚ Marking Symbol: V 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 µA tinue anc Forward current transfer ratio * hFE VCB = 10 V, IE = −1 mA 70 220  M is con inten Transition frequency fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHz /Dis ma Noise figure NF VCB =...