2SC2168

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2168 DESCRIPTION ·With TO-220 package ·High collector-emitter breakdown voltage : VCEO=200V(min) APPLICATIONS ·Power amplifier applications ·TV vertical deflection applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 200 200 6 2 3 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=0.5mA ;IE=0 IE=0.5mA ;IC=0 IC=0.5A ;IB=50m A VCB=200V;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=10V 50 MIN 200 200 6 2SC2168 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V 1.0 10 10 V µA µA 20 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE...