isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2166
DESCRIPTION ·High Power Gain-
: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for 3 to 4 watts output power amplifiers in HF band
mobile radio applications.
ABSOLUTE MAXIMUM...
