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2SC2149 Datasheet

Part Number 2SC2149
Manufacturers NEC
Logo NEC
Description MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Datasheet 2SC2149 Datasheet2SC2149 Datasheet (PDF)

DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. 4.0 MIN. PACKAGE DIMENSIONS (Unit : mm) 1 0.5±0.05 0.1−0.03 +0.06 FEATURES 2SC2148 NF: 2.1 dB TYP. @f = 500 MHz 2SC.

  2SC2149   2SC2149






Part Number 2SC2148
Manufacturers NEC
Logo NEC
Description MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Datasheet 2SC2149 Datasheet2SC2148 Datasheet (PDF)

DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. 4.0 MIN. PACKAGE DIMENSIONS (Unit : mm) 1 0.5±0.05 0.1−0.03 +0.06 FEATURES 2SC2148 NF: 2.1 dB TYP. @f = 500 MHz 2SC.

  2SC2149   2SC2149







Part Number 2SC2140
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC2149 Datasheet2SC2140 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base V.

  2SC2149   2SC2149







Part Number 2SC2140
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC2149 Datasheet2SC2140 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2140 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Switching regulator applications ·High speed DC-DC converter applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-ba.

  2SC2149   2SC2149







MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. 4.0 MIN. PACKAGE DIMENSIONS (Unit : mm) 1 0.5±0.05 0.1−0.03 +0.06 FEATURES 2SC2148 NF: 2.1 dB TYP. @f = 500 MHz 2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz 4.0 MIN. 2 4.0 MIN. 4 3 0.5±0.05 2.55±0.2 φ 2.1 1.8 MAX. 0.55 1. 2. 3. 4. Emitter Collector Emitter Base Derating curves of the 2SC2148, 2SC2149. The maximum junction temperature of these transistors is allowed up to 200 °C, but the ambient or storage temperature is limitted to 150 °C. The operating junction temperature is estimated with power consumption (PT) and thermal resistance mentioned on these derating curves. The information in this document is subject to change without notice. Document No. P11809EJ2V0DS00 (2nd edition) (Previous No. TC-1428) Date Published August 1996 P Printed in Japan 4.0 MIN. 45° © 1981 2SC2148, 2SC2149 2SC2148 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 500 400 300 200 100 0 PT−Total Power Dissipation−mW with infinite heat sink; Rth(j-c) 130 °C/W mounting on ceramic boad with solder (Al2O3 20 × 50 × 0.635 mm) ; Rth(j-a) 190 °C/W free-air; Rth(j-a) 610 °C/W 50 100 150 200 48 TA−Ambient Temperature−°.


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