2SC2073A

2SC2073A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2073A Power Amplifier Applications Vertical Output Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A Base current IB 0.5 A Collector power dissipation Junction temperature Ta = 25°C Tc = 25°C PC Tj 2.0 W 25 150 °C 1.Base 2.Collector 3.Emitter Storage temperature range Tstg −55 to 150 °C JEDEC ― Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA TOSHIBA SC-67 2-10R1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 1.7 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-11-26 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE VCE...