2SC1826

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC1826 DESCRIPTION ·With TO-220 package ·Collector current :IC=4A ·Collector power dissipation :PC=30W@TC=25 APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 60 6 4 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=3A ;IB=0.3A VCB=80V;IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=12V 40 MIN 60 80 6 2SC1826 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V 1.0 1.5 100 100 320 10 V V µA µA MHz 2 SavantIC Semiconductor www.DataSheet4U.com ...