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2SC1785 Datasheet

Part Number 2SC1785
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC1785 Datasheet2SC1785 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC1785 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collect.

  2SC1785   2SC1785






Part Number 2SC1785
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC1785 Datasheet2SC1785 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1785 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltag.

  2SC1785   2SC1785







SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC1785 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 200 6 15 4 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=10A; IB=1A IC=10A; IB=1A VCB=200V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V 20 MIN 200 6 2SC1785 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 2.0 2.5 100 100 V V µA µA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1785 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .


2009-03-09 : EKV    D2573    2SD2573    2SJ78    2SJ76    2SJ77    2SJ79    B3D230L    B3D090L    EKV550   


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