SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES High Breakdown Voltage : VCEO=80V Complementary to 2SA816.
Unit in mm
10.3 MAX 0Z.6 ±0.2
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Curre...
