2SC1473

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 / ■ Features High collector-emitter voltage (Base open) VCEO e High transition frequency fT c tage. ■ Absolute Maximum Ratings Ta = 25°C n d le s Parameter Symbol Rating Unit 0.7±0.2 12.9±0.5 a e cyc Collector-base voltage 2SC1473 VCBO 250 V life (Emitter open) 2SC1473A 300 n u uct Collector-emitter voltage 2SC1473 VCEO 200 V rod (Base open) 2SC1473A 300 2.3±0.2 te tin r P Emitter-base voltage (Collector open) VEBO 7 V fou Collector current IC 70 mA ing type n. Peak collector current ICP 100 mA in n llow ce atio Collector power dissipation PC 750 mW fo an pe ed rm Junction temperature Tj 150 °C a o ludes inten ce ty d typ t info /en/ Storage temperature Tstg −55 to +150 °C 0.7±0.1 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..115 1 23 EIAJ: SC-43A 1: Emitter 2: Collector 3: Base TO-92-B1 Package c ued incned maintenanontinued type t lates .co.jp ■ Electrical Characteristics Ta = 25°C ± 3°C M is tin la a isc ue ou nic Parameter Symbol Conditions Min Typ Max Unit on p m d d ntin ab aso Collector-emitter voltage 2SA1473 VCEO IC = 100 µA, IB = 0 200 V isc ne co RL an (Base open) 2SA1473A 300 e/D pla dis ing U on.p Emitter-base voltage (Collector open) VEB...