2SC1469

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1469 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 500 V 400 V 7 V 10 A 100 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 17.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1469 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=5A; IB= 1.0A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 1.0A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 hFE-1 DC Current Gain IC=1A; VCE= 5V hFE-2 DC Current Gain IC=5A; VCE= 5V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 MIN TYP. MAX UNIT 1.0 V 2.0 V 400 V 7 V 15 50 8 100 uA 100 uA NOTICE： ISC reserves the rights to make chang...