2SC1251
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The 2SC1251 is a Common Emitter Device Designed for High Linearit...
2SC1251
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A
Amplifiers up to 2.0 GHz.
FEATURES INCLUDE:
Direct Replacement for NE74020 High Gain - 10 dB min. @ 1.0 GHz Gold Metalization
PACKAGE STYLE .204 4L STUD
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC
O O
300 mA 45 V 5.3W @ TC = 25 C -65 C to +200 C -65 C to +150 C 33 C/W
O O O O
1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO hFE COB PG P1dB
TC = 25 C
O
TEST CONDITIONS
IC = 10 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V VCB = 15 V VCE = 15 V IC = 100 mA IC = 100 mA f = 1.0 MHz POUT = 0.5 W f = 1000 MHz
MINIMUM TYPICAL MAXIMUM
25 45 3.0 20 200 3.0 13 +27 +29
UNITS
V V V --pF dB dBm
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/2
TVU005B
S - PARAMETERS
VCE = 20 Volts, FREQ. MHz
100 200 300 400 500 600 700 800 900 1,000
ID = 150 mA S12 S22 ANG.
30 30 30 30 35 35 35 40 45 45
S11 MAG.
0.735 0.840 0.860 0.857 0.855 0.850 0.850 0.850 0.855 0.860
S21 ANG.
190 188 181 178 173 170 168 165 163 161
MAG.
13.65 8.15 5.75 4.25 3.50 2.80 2.45 2.20 2.00 1.75
ANG.
115 100 90 80 70 66 60 55 50 45
MAG.
0.025 0.025 0.025 0.030 0.035 0.035 0.040 0.045 0.050 0.055
MAG.
0.364 0.275 0.280 0.285 0.300 0.310 0.320 0.330 0.340 0.350
ANG.
280 240 240 230 225 220 215 210 215 215
A...
