2SC1213A(K)
Silicon NPN Epitaxial
Application
• Low frequency amplifier • Medium speed switching
Outline
TO-92 (1)
1....
2SC1213A(K)
Silicon NPN Epitaxial
Application
Low frequency amplifier Medium speed switching
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SC1213A (K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 50 4 500 400 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown
voltage Symbol V(BR)CBO Min 50 50 4 —
1
Typ — — — — — — 0.64
Max — — — 0.5 320 — — 0.6 1.2 — — — — —
Unit V V V µA
Test conditions I C = 10 µA, IE = 0 I C = 1.0 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 500 mA*2
Collector to emitter breakdown V(BR)CEO
voltage Emitter to base breakdown
voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE* hFE Base to emitter
voltage Collector to emitter saturation
voltage Base to emitter satruation
voltage Collector output capacitance Gain bandwidth product Turn on time Turn off time Storage time VBE VCE(sat) VBE(sat) Cob fT t on t off t stg
60 10
V V V pF MHz µS µS µS
VCE = 3 V, IC = 10 mA I C = 150 mA, IB = 15 mA*2 I C = 150 mA, IB = 15 mA*2 VCB = 10 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 mA VCC = 10.3 V I C = 10 IB1 = –10 IB2 = 10 mA
— — — — — — —
0.12 0.83 7.0 120 0.25 0.85 0.4
VCC = 5 V I C = IB1 = –IB2 = 20 mA
Note...