2SC1162

2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings 35 35 5 2.5 3 0.75 10 150 –55 to +150 Unit V V V A A W W °C °C 2SC1162 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 35 35 5 — 1 Typ — — — — — — 0.93 0.5 180 Max — — — 20 320 — 1.5 1.0 — Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 35 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.5 A (pulse test) Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE* hFE Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Note: B 60 to 120 VBE VCE(sat) fT 60 20 — — — V V MHz VCE = 2 V, IC = 1.5 A (pulse test) I C = 2 A, IB = 0.2 A (pulse test) VCE = 2 V, IC = 0.2 A 1. The 2SC1162 is grouped by h FE as follows. C 100 to 200 D 160 to 320 Maximum Collector Dissipation Curve 0.8 Collector power dissipation PC (W) 0.75 Collector current IC (A) 0.6 5 Area of Safe Operat...