2SB963

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB963 DESCRIPTION ·With TO-251(IPAK) packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to type 2SD1286 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PT Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation Max.Junction Temperature -60 V -60 V -8 V -1 A -2 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB963 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=-0.5A ,IB= -50mA VBE(sat)1 Base-Emitter Saturation Voltage IC=-0.5A ,IB= -50mA ICBO Collector Cutoff Current VCB=-60V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.2A ; VCE= -2V hFE-2 DC Current Gain IC=...