2SB963-Z

DATA SHEET SILICON POWER TRANSISTOR 2SB963-Z PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) DESCRIPTION The 2SB963-Z is designed for switching, especially in Hybrid Integrated Circuits. FEATURES High Gain hFE = 2000 to 3000 Complement to 2SD1286-Z PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.5 ±0.1 Note 5.6 ±0.3 9.5 ±0.5 5.5 ±0.2 123 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector Current (DC) Collector Current (pulse) Note 1 Total Power Dissipation Note 2 Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse) PT (TA = 25°C) Tj Tstg −60 −60 −8 m1.0 m2.0 2.0 150 −55 to +150 V V V A A W °C °C 2.3 ±0.3 0.5 ±0.1 2.3 ±0.3 0.5 ±0.1 0.15 ±0.15 TO-252 (MP-3Z) 1. Base 2. Collector 3. Emitter 4. Collector Fin Note The depth of notch at the top of the fin is from 0 to 0.2 mm. Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18261EJ4V0DS00 (4th edition) (Previous No. TC-1627A) Date Published July 2006 NS CP...