2SB962-Z

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB962-Z DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.3V(Typ)@IC= -2.0A ·PNP silicon epitaxial transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SB962-Z is designed for Audio frequency amplifier and switching ,especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ -6 A 2.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB962-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat)NOTE Collector-Emitter Saturation Voltage VBE(sat)NOTE Base-Emitter Saturation Voltage IEBO Emitter Cutoff Current ICBO Collector Cutoff Current hFE1NOTE DC Current Gain hFE2NOTE DC Current Gain IC= -2.0A; IB= -200mA IC= -2.0A; IB= -200mA VEB= -3V; IC= 0 VCB= -30V; IE= 0 IC= -1A; VCE= -2V IC= -20mA; VCE= -2V -0.3 -0.5 V -1.0 -2.0 V -1.0 μA -10 μA 60 400 30 fT Transition frequency VCE=-5V ,IC=-100mA 80 MHz Cob Collecto...