Power Transistors
2SB0952 (2SB952), 2SB0952A (2SB952A)
www.DataSheet4U.net
Silicon PNP epitaxial planar type
For low-v...
Power Transistors
2SB0952 (2SB952), 2SB0952A (2SB952A)
www.DataSheet4U.net
Silicon PNP epitaxial planar type
For low-
voltage switching
Unit: mm
■ Features
Low collector-emitter saturation
voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.2
3.4±0.3 1.0±0.1
4.4±0.5
Parameter Collector-base
voltage (Emitter open) 2SB0952 2SB0952A
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C
Rating −40 −50 −20 −40 −5 −7 −12 30 1.3 150 −55 to +150
Unit V
2.0±0.5
■ Absolute Maximum Ratings TC = 25°C
Collector-emitter
voltage 2SB0952 (Base open) 2SB0952A Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
V
(6.5)
V A A W °C °C
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter
voltage (Base open) Collector-base cutoff current (Emitter open) 2SB0952 2SB0952A 2SB0952 2SB0952A IEBO hFE1 hFE2 Collector-emitter saturation
voltage Base-emitter saturation
voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Storage time Fall time
*
Symbol VCEO ICBO
Conditions IC = −10 mA, IB = 0 VCB = −40 V, IE = 0 VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2...