2SB949A

Power Transistors 2SB0949 (2SB949), 2SB0949A (2SB949A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlington 4.2±0.2 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 For power amplification and switching Complementary to 2SD1275 and 2SD1275A High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.2 ■ Features φ 3.1±0.1 Solder Dip (4.0) 14.0±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SB0949 2SB0949A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −2 −4 35 2 150 −55 to +150 °C °C V A A W V Unit V 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.5 Collector-emitter voltage 2SB0949 (Base open) 2SB0949A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C B ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0949 2SB0949A 2SB0949 2SB0949A IEBO hFE1 hFE2 * Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf ICEO 2SB0949 2SB0949A VBE ICBO VCE = −4 V, IC = −2 A VCB = −60 V, IE = ...