Power Transistors
2SB0949 (2SB949), 2SB0949A (2SB949A)
www.DataSheet4U.net
Silicon PNP epitaxial planar type darlingto...
Power Transistors
2SB0949 (2SB949), 2SB0949A (2SB949A)
www.DataSheet4U.net
Silicon PNP epitaxial planar type darlington
4.2±0.2
Unit: mm
0.7±0.1
10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
For power amplification and switching Complementary to 2SD1275 and 2SD1275A
High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
7.5±0.2
■ Features
φ 3.1±0.1
Solder Dip (4.0)
14.0±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base
voltage (Emitter open) 2SB0949 2SB0949A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −2 −4 35 2 150 −55 to +150 °C °C V A A W V Unit V
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
0.8±0.1
2.54±0.3 5.08±0.5
Collector-emitter
voltage 2SB0949 (Base open) 2SB0949A Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
1 2 3
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Internal Connection
C B
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter
voltage (Base open) Base-emitter
voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0949 2SB0949A 2SB0949 2SB0949A IEBO hFE1 hFE2 * Collector-emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf ICEO 2SB0949 2SB0949A VBE ICBO VCE = −4 V, IC = −2 A VCB = −60 V, IE = ...