2SB945

Power Transistors 2SB0945 (2SB945) www.DataSheet4U.net Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 ■ Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw. 16.7±0.3 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −5 −10 40 2 150 −55 to +150 °C °C Unit V V V A A W 14.0±0.5 0.8±0.1 2.54±0.3 5.08±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC...