2SB942

Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A ■ Features 16.7±0.3 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 High forward current transfer ratio hFE which has satisfactory linearity Large collector-emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 φ 3.1±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0942 2SB0942A VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 40 2 150 −55 to +150 °C °C V A A W 1 2 3 Unit V Solder Dip (4.0) 14.0±0.5 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 Collector-emitter voltage 2SB0942 (Base open) 2SB0942A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature V 2.54±0.3 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) 2SB0942 2SB0942A ICEO IEBO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf 2SB0942 2SB0942A VBE ICES VCE = −4 V, IC = −3 A VCE = −60 V, VBE = 0 VCE = −80 V, VBE = 0 VCE = −30 V, I...