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2SB939 Datasheet

Part Number 2SB939
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description PNP Transistor
Datasheet 2SB939 Datasheet2SB939 Datasheet (PDF)

Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –60 –80 –60 –80 –7 –12 –8 45 1.3 150 –55 to +150 Unit V 1.5±0.1 1.5max..

  2SB939   2SB939






Part Number 2SB939
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Power Transistors
Datasheet 2SB939 Datasheet2SB939 Datasheet (PDF)

Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) www.DataSheet4U.net Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262, 2SD1262A 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 Collector-base voltage (Emitter open) 2SB0939 2SB0939A VCBO VCEO VEBO IC ICP PC −60 −80 −60 −80 −7 −8 −12 45 1.3 V (6.5) Collector-emitter voltage 2SB0939 (Base open) 2SB0939A Emitter-base voltage (Collector open) Collector current Peak collecto.

  2SB939   2SB939







PNP Transistor

Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –60 –80 –60 –80 –7 –12 –8 45 1.3 150 –55 to +150 Unit V 1.5±0.1 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB939 2SB939A 2SB939 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 emitter voltage 2SB939A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W 10.0±0.3 6.0±0.3 1.5–0.4 2.0 3.0–0.2 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.08±0.5 ˚C ˚C 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB939 2SB939A 2SB939 2SB939A 1:Base 2:Collector 3:Emitter N Type Package (DS) (TC=25˚C) Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0 VEB = –7V, IC = 0 IC = –30mA, IB = 0 VCE = –3V, IC = –4A VCE = –3V, IC = –8A IC = –4.


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