Power Transistors
2SB938, 2SB938A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching Co...
Power Transistors
2SB938, 2SB938A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching Complementary to 2SD1261 and 2SD1261A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
q q q
High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings –60 –80 –60 –80 –5 –8 –4 40 1.3 150 –55 to +150 Unit V
1.5±0.1
s Features
1.5max.
10.5min. 2.0
1.1max.
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SB938 2SB938A 2SB938 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2
emitter
voltage 2SB938A Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V
10.0±0.3
6.0±0.3
V A A W
1.5–0.4
2.0
3.0–0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
˚C
1 2 3
˚C
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter
voltage 2SB938 2SB938A 2SB938 2SB938A 2SB938 2SB938A
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf IC = –3A, IB1 = –12mA, IB2 = 12mA
C
*
1:Base 2:Collector 3:Emitter N Type Package (DS)
Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0...
