2SB937A

Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) www.DataSheet4U.net Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1260, 2SD1260A ■ Features High forward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0937 2SB0937A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating −60 −80 −60 −80 −5 −2 −4 35 1.3 150 −55 to +150 Unit V (6.5) Collector-emitter voltage 2SB0937 (Base open) 2SB0937A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V V A A W B °C °C E Conditions Min −60 −80 Typ 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. Internal Connection C Junction temperature Storage temperature ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0937 2SB0937A 2SB0937 2SB0937A IEBO hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time fT ton tstg tf * Symbol 2SB0937 2SB0937A VBE ICBO ICEO VCEO Max (7.6) Unit V IC = −30 mA, IB = 0 VCE = −4 V,IC = −2 ...