isc Silicon PNP Power Transistor
2SB924
DESCRIPTION ·Wide Safety Operation Area ·Low Collector Saturation Voltage
: VC...
isc Silicon PNP Power Transistor
2SB924
DESCRIPTION ·Wide Safety Operation Area ·Low Collector Saturation
Voltage
: VCE(sat)= -0.5V(Max)@IC= -12A ·Complement to Type 2SD1240 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for large current switching of relay drivers, high-
speed inverters, converters applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
-120
V
VCEO Collector-Emitter
Voltage
-80
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
-25
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-40
A
120
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
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isc Silicon PNP Power Transistor
2SB924
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -1mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown
Voltage
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -12A; IB= -1.2A
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -2V
hFE-2
DC Current Gain
IC= -12A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -2V
MIN TYP. MAX UNIT
-80
V
-120
V
-6
V
-0....